"**SI2303BDS-T1-GE3-VB**
- **Brand:** VBsemi
- **Parameters:**
- Package: SOT23
- Channel type: P—Channel
- Rated voltage: -30V
- Maximum current: -5.6A
- On-resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V
- **Package:** SOT23
**Detailed parameter description:**
SI2303BDS-T1-GE3-VB is a VBsemi brand P-Channel field effect transistor, using SOT23 package. Its main electrical characteristics include a rated voltage of -30V, a maximum current of -5.6A, an on-resistance of 47mΩ @ VGS=10V, VGS=20V, and a threshold voltage of -1V.
**Application Introduction:**
SI2303BDS-T1-GE3-VB is suitable for a variety of power management and switching circuit applications. Its P-Channel design enables it to provide efficient power control in specific occasions. Due to its performance characteristics, this device is commonly used in the following fields and modules:
1. **Power Switch Module:** SI2303BDS-T1-GE3-VB can be used to design efficient power switch modules such as regulators and switching power supplies.
2. **Battery Management System:** Due to the low threshold voltage and low on-resistance, the device is suitable for battery management systems to provide efficient power switch control.
3. **Current Control Module:** SI2303BDS-T1-GE3-VB can play a role in circuits that require P-Channel MOSFET for current control.
4. **LED Driver:** Suitable for LED lighting applications, providing efficient current regulation and switching control.
Please note that in specific applications, ensure correct design and use according to the SI2303BDS-T1-GE3-VB datasheet and design manual."
- **Brand:** VBsemi
- **Parameters:**
- Package: SOT23
- Channel type: P—Channel
- Rated voltage: -30V
- Maximum current: -5.6A
- On-resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V
- **Package:** SOT23
**Detailed parameter description:**
SI2303BDS-T1-GE3-VB is a VBsemi brand P-Channel field effect transistor, using SOT23 package. Its main electrical characteristics include a rated voltage of -30V, a maximum current of -5.6A, an on-resistance of 47mΩ @ VGS=10V, VGS=20V, and a threshold voltage of -1V.
**Application Introduction:**
SI2303BDS-T1-GE3-VB is suitable for a variety of power management and switching circuit applications. Its P-Channel design enables it to provide efficient power control in specific occasions. Due to its performance characteristics, this device is commonly used in the following fields and modules:
1. **Power Switch Module:** SI2303BDS-T1-GE3-VB can be used to design efficient power switch modules such as regulators and switching power supplies.
2. **Battery Management System:** Due to the low threshold voltage and low on-resistance, the device is suitable for battery management systems to provide efficient power switch control.
3. **Current Control Module:** SI2303BDS-T1-GE3-VB can play a role in circuits that require P-Channel MOSFET for current control.
4. **LED Driver:** Suitable for LED lighting applications, providing efficient current regulation and switching control.
Please note that in specific applications, ensure correct design and use according to the SI2303BDS-T1-GE3-VB datasheet and design manual."
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Tech