H2305N-VB is a SOT23 package P-Channel field effect MOS tube

"H2305N-VB is a P-Channel MOSFET launched by VBsemi brand, using SOT23 package. The following is a detailed parameter description and application introduction of the device:

- **Parameters: **
- Package type: SOT23
- Channel type: P-Channel
- Maximum withstand voltage: -30V
- Maximum drain current: -5.6A
- On resistance: 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage: -1V

- **Application introduction: **
H2305N-VB is a P-Channel MOSFET designed for low voltage and medium current applications. Its excellent performance characteristics make it perform well in a variety of applications.

- **Application fields: **
This device is suitable for the following fields:
- Power management module
- Battery protection circuit
- DC-DC converter
- Current limiting and switching applications

- **Module application: **
At the module level, H2305N-VB can be widely used in:
- Mobile device charging management module
- Battery-powered portable devices
- Low voltage, high-efficiency power management system
- Small power switching module

The excellent performance of this P-Channel MOSFET makes it an ideal choice for a variety of low-power and high-efficiency power management applications, providing flexibility and reliability for electronic design."